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IXFR24N90P
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
ISOPLUS247 (IXFR) Outline
g fs
R Gi
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
V DS = 20V, I D = 12A, Note 1
Gate input resistance
V GS = 0V, V DS = 25V, f = 1MHz
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 12A
R G = 1 Ω (External)
V GS = 10V, V DS = 0.5 ? V DSS , I D = 12A
10
16
1.1
7200
490
60
46
40
68
38
130
50
58
S
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
R thJC
0.54 ° C /W
R thCS
0.15
° C /W
Source-Drain Diode
T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
I S
I SM
V SD
V GS = 0V
Repetitive, pulse width limited by T JM
I F = I S , V GS = 0V, Note 1
24
96
1.5
A
A
V
t rr
Q RM
I RM
I F = 12A, -di/dt = 100A/ μ s
V R = 100V, V GS = 0V
1.1
11
300 ns
μ C
A
Note 1: Pulse test, t ≤ 300 μ s; duty cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or moreof the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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